SGL160N60UFDTU
IGBT 600V 160A 250W TO264Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGL160N60UFDTU is a 600V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a continuous collector current of 160A and a pulsed collector current of 300A, with a maximum power dissipation of 250W. The SGL160N60UFDTU exhibits low conduction losses, with a Vce(on) of 2.6V at 15V Vge and 80A Ic. Switching characteristics include a typical turn-on delay of 40ns and turn-off delay of 90ns at 25°C, with a reverse recovery time of 95ns. Gate charge is specified at 345 nC. This component is housed in a TO-264-3 package suitable for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. The SGL160N60UFDTU is utilized in industrial power supplies, motor control, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 95 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 80A |
| Supplier Device Package | TO-264-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 40ns/90ns |
| Switching Energy | 2.5mJ (on), 1.76mJ (off) |
| Test Condition | 300V, 80A, 3.9Ohm, 15V |
| Gate Charge | 345 nC |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 250 W |
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