SGH80N60UFTU
IGBT 600V 80A 195W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGH80N60UFTU is a 600V, 80A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a maximum collector current of 80A, with a pulsed capability of 220A. Its low collector-emitter saturation voltage is 2.6V at 15V gate drive and 40A collector current. The SGH80N60UFTU offers efficient switching with typical turn-on and turn-off delays of 23ns and 90ns respectively, at 25°C, and switching energy ratings of 570µJ (on) and 590µJ (off) under specified test conditions. This device is packaged in a TO-3P-3, SC-65-3 (TO-3P) through-hole configuration, rated for a maximum power dissipation of 195W and an operating temperature range of -55°C to 150°C. It is suitable for use in power factor correction, motor control, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | 23ns/90ns |
| Switching Energy | 570µJ (on), 590µJ (off) |
| Test Condition | 300V, 40A, 5Ohm, 15V |
| Gate Charge | 175 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 220 A |
| Power - Max | 195 W |
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