SGH80N60UFDTU
IGBT 600V 80A 195W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGH80N60UFDTU is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This TO-3P packaged device offers a robust 600 V collector-emitter breakdown voltage and a continuous collector current of 80 A, with a pulsed current capability of up to 220 A. Its 195 W power dissipation and a low collector-emitter saturation voltage of 2.6 V at 15 V gate-emitter voltage and 40 A collector current ensure efficient operation.
Key performance characteristics include a gate charge of 175 nC and switching times of 23 ns turn-on and 90 ns turn-off at 25°C. The reverse recovery time is specified at 95 ns, with switching energies of 570 µJ (on) and 590 µJ (off) under test conditions of 300 V, 40 A, 5 Ohm, and 15 V. This component is suitable for applications in industrial power supplies, motor control, and renewable energy systems. It operates across a wide temperature range of -55°C to 150°C (TJ) and is supplied in a TO-3P-3, SC-65-3 package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 95 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | 23ns/90ns |
| Switching Energy | 570µJ (on), 590µJ (off) |
| Test Condition | 300V, 40A, 5Ohm, 15V |
| Gate Charge | 175 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 220 A |
| Power - Max | 195 W |
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