SGH40N60UFDTU
IGBT 600V 40A 160W TO3PManufacturer: onsemi
Categories: Single IGBTs
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onsemi SGH40N60UFDTU is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) in a TO-3P package. This device offers a maximum power dissipation of 160W and a pulsed collector current of 160A. Key electrical characteristics include a Vce(on) of 2.6V at 15V Vge and 20A Ic, with a gate charge of 97 nC. Switching performance is defined by typical on and off times of 15ns and 65ns respectively, with switching energies of 160µJ (on) and 200µJ (off) at 300V, 20A, 10 Ohm, 15V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in industrial power supplies, motor control, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 20A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/65ns |
| Switching Energy | 160µJ (on), 200µJ (off) |
| Test Condition | 300V, 20A, 10Ohm, 15V |
| Gate Charge | 97 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 160 W |
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