SGH40N60UFDM1TU
IGBT 600V 40A 160W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGH40N60UFDM1TU is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 160W. This device features a robust TO-3P package designed for through-hole mounting, ensuring reliable thermal management in demanding applications. Key electrical characteristics include a collector saturation voltage (Vce(on)) of 2.6V at 15V gate-emitter voltage and 20A collector current. The IGBT exhibits a pulsed collector current (Icm) of 160A and a typical gate charge of 97 nC. Switching performance is characterized by a reverse recovery time (trr) of 60 ns and switching energies of 160µJ (turn-on) and 200µJ (turn-off) under specific test conditions (300V, 20A, 10 Ohm, 15V). The SGH40N60UFDM1TU is suitable for use in power conversion systems, motor control, and industrial power supplies. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 20A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/65ns |
| Switching Energy | 160µJ (on), 200µJ (off) |
| Test Condition | 300V, 20A, 10Ohm, 15V |
| Gate Charge | 97 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 160 W |
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