SGH30N60RUFDTU
IGBT 600V 48A 235W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGH30N60RUFDTU is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a continuous collector current (Ic) capability of 48A, with a pulsed collector current (Icm) of 90A. The collector-emitter saturation voltage (Vce(on)) is a maximum of 2.8V at 15V Vge and 30A Ic. With a maximum power dissipation of 235W, it is suitable for demanding environments. The gate charge is specified at 85 nC, and typical turn-on and turn-off times at 25°C are 30ns and 54ns respectively, with a reverse recovery time (trr) of 95ns. Switching energy is rated at 919µJ for turn-on and 814µJ for turn-off under typical test conditions of 300V, 30A, 7 Ohm, and 15V. Packaged in a TO-3P-3, SC-65-3 (TO-3P) for through-hole mounting, this IGBT operates across a temperature range of -55°C to 150°C (TJ). Applications include industrial motor control and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 95 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 30A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/54ns |
| Switching Energy | 919µJ (on), 814µJ (off) |
| Test Condition | 300V, 30A, 7Ohm, 15V |
| Gate Charge | 85 nC |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 235 W |
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