SGH20N60RUFDTU
IGBT 600V 32A 195W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGH20N60RUFDTU is a 600V, 32A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a continuous collector current of 32A and a pulsed collector current of 60A, with a maximum power dissipation of 195W. The IGBT exhibits a low collector-emitter saturation voltage (Vce(on)) of 2.8V at 15V gate-source voltage and 20A collector current. Key switching characteristics include a gate charge of 55 nC, a reverse recovery time (trr) of 95 ns, and switching energies of 524 µJ (turn-on) and 473 µJ (turn-off) under test conditions of 300V, 20A, 10 Ohm, and 15V. Operating over an extended temperature range of -55°C to 150°C (TJ), the SGH20N60RUFDTU is packaged in a TO-3P-3, SC-65-3 (TO-3P) through-hole configuration and supplied in tubes. This component is utilized in industrial applications such as power supplies, motor control, and lighting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 95 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 20A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/48ns |
| Switching Energy | 524µJ (on), 473µJ (off) |
| Test Condition | 300V, 20A, 10Ohm, 15V |
| Gate Charge | 55 nC |
| Current - Collector (Ic) (Max) | 32 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 195 W |
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