SGH15N60RUFDTU
IGBT 600V 24A 160W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGH15N60RUFDTU is a 600V, 24A Insulated Gate Bipolar Transistor (IGBT) in a TO-3PN package. This device offers a maximum power dissipation of 160W and a continuous collector current of 24A, with a pulsed current capability of 45A. Key performance parameters include a gate charge of 42nC, a collector-emitter saturation voltage (Vce(on)) of 2.8V at 15V, 15A, and a reverse recovery time (trr) of 60ns. Switching characteristics are rated at 17ns turn-on and 44ns turn-off at 25°C, with switching energy values of 320µJ (on) and 356µJ (off) under specified test conditions (300V, 15A, 13Ohm, 15V). Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in power factor correction, motor control, and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 15A |
| Supplier Device Package | TO-3PN |
| IGBT Type | - |
| Td (on/off) @ 25°C | 17ns/44ns |
| Switching Energy | 320µJ (on), 356µJ (off) |
| Test Condition | 300V, 15A, 13Ohm, 15V |
| Gate Charge | 42 nC |
| Current - Collector (Ic) (Max) | 24 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 160 W |
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