SGF5N150UFTU
IGBT 1500V 10A 62.5W TO3PFManufacturer: onsemi
Categories: Single IGBTs
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onsemi SGF5N150UFTU is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for robust power switching applications. This component features a 1500 V collector-emitter breakdown voltage and a continuous collector current capability of 10 A, with a pulsed current rating of 20 A. The device offers a maximum power dissipation of 62.5 W and exhibits low switching energy of 190 µJ (on) and 100 µJ (off) at typical test conditions of 600 V, 5 A, 10 Ohm, and 10 V. With a standard input type and a low on-state voltage of 5.5 V at 10 V gate drive and 5 A collector current, the SGF5N150UFTU is suitable for demanding power conversion circuits. The TO-3PF package facilitates through-hole mounting and operation across a wide temperature range of -55°C to 150°C. This IGBT is commonly utilized in industrial power supplies, motor control, and energy generation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 5.5V @ 10V, 5A |
| Supplier Device Package | TO-3PF |
| IGBT Type | - |
| Td (on/off) @ 25°C | 10ns/30ns |
| Switching Energy | 190µJ (on), 100µJ (off) |
| Test Condition | 600V, 5A, 10Ohm, 10V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 1500 V |
| Current - Collector Pulsed (Icm) | 20 A |
| Power - Max | 62.5 W |
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