SGF40N60UFTU
IGBT 600V 40A 100W TO3PFManufacturer: onsemi
Categories: Single IGBTs
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onsemi SGF40N60UFTU is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) housed in a TO-3PF package. This device features a continuous collector current of 40A and a pulsed collector current capability of 160A. The collector-emitter saturation voltage (Vce(on)) is a maximum of 2.6V at 15V Vge and 20A Ic. With a gate charge of 97 nC, typical turn-on delay (Td(on)) is 15ns and turn-off delay (Td(off)) is 65ns at 25°C, with switching energies of 160µJ (on) and 200µJ (off) under test conditions of 300V, 20A, 10 Ohm, 15V. This component is rated for a maximum power dissipation of 100W and operates within an extended temperature range of -55°C to 150°C (TJ). The SGF40N60UFTU is suitable for applications in power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 20A |
| Supplier Device Package | TO-3PF |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/65ns |
| Switching Energy | 160µJ (on), 200µJ (off) |
| Test Condition | 300V, 20A, 10Ohm, 15V |
| Gate Charge | 97 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 100 W |
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