SGF23N60UFDTU
IGBT 600V 23A 75W TO3PFManufacturer: onsemi
Categories: Single IGBTs
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onsemi SGF23N60UFDTU, a 600V, 23A Insulated Gate Bipolar Transistor (IGBT) in a TO-3PF package. This device features a maximum collector power dissipation of 75W and a pulsed collector current of 92A. Optimized for high-frequency switching applications, it exhibits a typical gate charge of 49 nC. The on-state voltage (Vce(on)) is a maximum of 2.6V at 15V gate-emitter voltage and 12A collector current. Switching characteristics include turn-on delay (Td(on)) of 17ns and turn-off delay (Td(off)) of 60ns at 25°C, with a reverse recovery time (trr) of 60ns, tested under 300V, 12A, 23-ohm, and 15V conditions. Switching energy is rated at 115µJ (on) and 135µJ (off). This through-hole component is commonly found in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 12A |
| Supplier Device Package | TO-3PF |
| IGBT Type | - |
| Td (on/off) @ 25°C | 17ns/60ns |
| Switching Energy | 115µJ (on), 135µJ (off) |
| Test Condition | 300V, 12A, 23Ohm, 15V |
| Gate Charge | 49 nC |
| Current - Collector (Ic) (Max) | 23 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 92 A |
| Power - Max | 75 W |
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