SGB8206ANTF4G
IGBT 20A, 350V, N-CHANNELManufacturer: onsemi
Categories: Single IGBTs
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The onsemi SGB8206ANTF4G is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This surface-mount device, packaged in a TO-263-3 (D2PAK) configuration, offers a robust 390V collector-emitter breakdown voltage and a maximum collector current of 20A. With a power dissipation rating of 150W, it is suitable for power factor correction, motor control, and induction heating systems. The input gate is logic level, ensuring compatibility with a wide range of control signals. The device exhibits a typical on-state voltage of 1.9V at 4.5V gate-emitter voltage and 20A collector current, contributing to efficient operation. This component is commonly utilized in industrial power supplies and automotive applications requiring reliable high-voltage switching.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
| Power - Max | 150 W |
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