SGB8206ANSL3G
IGBT 20A, 350V, N-CHANNELManufacturer: onsemi
Categories: Single IGBTs
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onsemi's SGB8206ANSL3G is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component offers a collector-emitter breakdown voltage of 390V and a maximum continuous collector current of 20A, suitable for power handling up to 150W. The IGBT features a low on-state voltage of 1.9V at 4.5V gate-source voltage and 20A collector current, ensuring efficient operation. Packaged in a TO-263-3, D2PAK configuration, it is optimized for surface mounting. This IGBT finds utility in industrial motor control, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
| Power - Max | 150 W |
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