The onsemi FGH series SFGH25N120FTDS is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A, with a pulsed capability up to 75 A. It offers a maximum power dissipation of 313 W and a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 25A collector current, ensuring efficient operation. Optimized switching characteristics are evident with typical turn-on delay (Td(on)) of 26 ns and turn-off delay (Td(off)) of 151 ns at 25°C, coupled with switching energies of 1.42 mJ (on) and 1.16 mJ (off) under specified test conditions. The SFGH25N120FTDS is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C. This device finds application in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: FGHRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 535 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 25A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 26ns/151ns |
| Switching Energy | 1.42mJ (on), 1.16mJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 169 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 313 W |
| Qualification | - |
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