onsemi IGBT, 650 V, 300 A FIELD STOP TR, PCGA300T65DF8. This high-performance insulated-gate bipolar transistor (IGBT) is engineered for demanding power conversion applications. Featuring a 650V breakdown voltage and a continuous collector current rating of 300A, it utilizes onsemi's advanced Field-Stop trench technology for enhanced efficiency and ruggedness. The PCGA300T65DF8 is ideal for high-power switching in industrial motor drives, electric vehicle powertrains, and renewable energy systems. Its robust construction and reliable performance ensure optimal operation in challenging environments. Supplied in bulk packaging for efficient integration into high-volume manufacturing processes.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet: