PCGA200T65NF8M1
IGBT 650 V, 200 A FIELD STOP TREManufacturer: onsemi
Categories: Single IGBTs
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onsemi PCGA200T65NF8M1 is a high-performance insulated gate bipolar transistor (IGBT) designed for demanding power switching applications. This component features a robust 650V breakdown voltage and a continuous collector current rating of 200A, making it suitable for high-power density designs. The FIELD STOP TRE technology ensures excellent switching characteristics, including low on-state voltage and fast switching speeds, which are critical for efficient power conversion. This IGBT is commonly utilized in industrial motor drives, electric vehicle powertrains, uninterruptible power supplies (UPS), and solar inverters. The bulk packaging facilitates high-volume integration into manufacturing processes.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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