onsemi IGBT, 650 V, 160 A FIELD STOP TR, part number PCGA160T65NF8. This high-performance insulated-gate bipolar transistor (IGBT) is designed for demanding power switching applications. Featuring a robust 650V breakdown voltage and a continuous collector current rating of 160A, it offers excellent thermal management and efficiency. The Field Stop trench technology ensures low on-state voltage drop and fast switching speeds, crucial for optimizing power conversion in industrial motor drives, electric vehicle powertrains, and renewable energy inverters. Packaged in Bulk, this component is a reliable choice for designers seeking high-density power solutions.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet: