PCFG75T65MQF
IGBT FIELD STOP 650V WAFERManufacturer: onsemi
Categories: Single IGBTs
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onsemi PCFG75T65MQF is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a 650V collector-emitter breakdown voltage and a typical on-state voltage (Vce(on)) of 1.9V at 15V gate-emitter voltage and 60A collector current. The IGBT offers a pulsed collector current (Icm) of 300A and a gate charge of 144 nC. Operating across a temperature range of -40°C to 175°C (TJ), it is supplied as a wafer for surface mount integration. This component is suitable for demanding applications in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 60A |
| Supplier Device Package | Wafer |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 144 nC |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 300 A |
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