PCFG75T65LQF
IGBT FIELD STOP 650V WAFERManufacturer: onsemi
Categories: Single IGBTs
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onsemi's PCFG75T65LQF is a 650V Field Stop Insulated Gate Bipolar Transistor (IGBT) presented as a bare die for surface mount applications. This component offers a robust 650V collector-emitter breakdown voltage and a maximum on-state voltage (Vce(on)) of 1.5V at 15V gate-emitter voltage and 60A collector current. The IGBT type is specified as Field Stop, with standard input characteristics and a significant gate charge of 830 nC. Designed for high-temperature operation, it functions within a range of -40°C to 175°C (TJ). The current handling capability includes a pulsed collector current (Icm) of 300A. This device is suitable for demanding applications in industries such as industrial power supplies, electric vehicle powertrains, and renewable energy systems where high voltage and current switching performance are critical. The PCFG75T65LQF is supplied in bulk packaging as a wafer.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 60A |
| Supplier Device Package | Wafer |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 830 nC |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 300 A |
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