PCFG60T65SQF
IGBT FIELD STOP 650V WAFERManufacturer: onsemi
Categories: Single IGBTs
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onsemi's PCFG60T65SQF is a 650V Field Stop Insulated Gate Bipolar Transistor (IGBT) presented as a die for wafer-level processing. This component features a collector emitter voltage (Vce) of 650V and an on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 60A collector current. The pulsed collector current (Icm) capability reaches 300A. With a gate charge of 79 nC, it offers efficient switching characteristics. The IGBT type is Field Stop with standard input. Operating across a temperature range of -40°C to 175°C (TJ), the PCFG60T65SQF is suitable for high-power applications in industries such as industrial motor drives, power supplies, and electric vehicle powertrains. The supplier device package is a wafer, supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 60A |
| Supplier Device Package | Wafer |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 79 nC |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 300 A |
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