NGTG35N65FL2WG
IGBT FIELD STOP 650V 70A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTG35N65FL2WG is a 650 V, 70 A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device offers robust performance with a maximum collector current of 70 A and a pulsed collector current of 120 A. It features a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 35A collector current. The NGTG35N65FL2WG boasts excellent switching characteristics, with turn-on delay (Td(on)) of 72ns and turn-off delay (Td(off)) of 132ns at 25°C, and associated switching energies of 840µJ (on) and 280µJ (off). With a maximum power dissipation of 300 W and an operating temperature range of -55°C to 175°C (TJ), this IGBT is suitable for demanding power conversion and control systems in industries such as industrial automation, power supplies, and motor drives. The component is supplied in a TO-247-3 package for through-hole mounting and is available in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 72ns/132ns |
| Switching Energy | 840µJ (on), 280µJ (off) |
| Test Condition | 400V, 35A, 10Ohm, 15V |
| Gate Charge | 125 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 300 W |
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