The onsemi NGTG20N60L2TF1G is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This TO-3PF packaged device offers a low collector-emitter saturation voltage (Vce(sat)) and fast switching characteristics, minimizing power losses in demanding environments. With a robust construction and a power dissipation rating of 64W, the NGTG20N60L2TF1G is suitable for use in industrial motor drives, power factor correction circuits, and uninterruptible power supplies (UPS). Its excellent thermal performance ensures reliability in extended operation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet: