NGTG15N120FL2WG
IGBT TRENCH/FS 1200V 30A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTG15N120FL2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 30 A, with a pulsed current rating of 60 A. Its low on-state voltage of 2.4 V at 15 V gate-emitter voltage and 15 A collector current, coupled with a maximum power dissipation of 294 W, makes it suitable for demanding power switching tasks. The device exhibits switching times of 64 ns turn-on and 128 ns turn-off at 600 V, 15 A, and 10 Ohms, with specified switching energies of 1.2 mJ (on) and 370 µJ (off). The NGTG15N120FL2WG is packaged in a TO-247-3 through-hole configuration and operates across a wide temperature range of -55°C to 175°C. This IGBT is commonly utilized in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 64ns/128ns |
| Switching Energy | 1.2mJ (on), 370µJ (off) |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Gate Charge | 109 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 294 W |
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