NGTD28T65F2WP
IGBT TRENCH FIELD STOP 650V DIEManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTD28T65F2WP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This die-level component offers a 650V collector-emitter breakdown voltage and a continuous collector current capability of 75A under specified test conditions (2V Vce(on) @ 15V Vge, 75A Ic). Its Trench Field Stop technology provides excellent switching performance and low on-state voltage drop. With a maximum junction temperature of 175°C, it is suitable for demanding operating environments. The NGTD28T65F2WP is utilized in power conversion systems, motor drives, and industrial power supplies. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
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