NGTD28T65F2SWK
IGBT TRENCH FIELD STOP 650V DIEManufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTD28T65F2SWK is a high-performance IGBT die designed for demanding applications. This Trench Field Stop IGBT offers a 650 V collector-emitter breakdown voltage, making it suitable for power conversion systems. With a collector current (Ic) of 75 A at a gate-emitter voltage (Vge) of 15 V, it delivers efficient switching capabilities. The device features a low on-state voltage (Vce(on)) of 2V at the specified test conditions, minimizing conduction losses. Operating across a wide temperature range of -55°C to 175°C, this die is ideal for use in industrial power supplies, motor control, and renewable energy systems. The NGTD28T65F2SWK is supplied in a Die package, suitable for Tape & Reel (TR) packaging for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
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