NGTD23T120F2SWK
IGBT TRENCH FIELD STOP 1200V DIEManufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTD23T120F2SWK is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a breakdown voltage of 1200V and a collector current of 25A under test conditions of 15V gate-emitter voltage, resulting in a typical on-state voltage (Vce(on)) of 2.2V. Operating across a wide temperature range from -55°C to 175°C, this IGBT is supplied as a bare die, suitable for surface mounting and available in Tape & Reel packaging. It is commonly utilized in power factor correction, motor control, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 25A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
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