NGTD21T65F2SWK
IGBT TRENCH FIELD STOP 650V DIEManufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTD21T65F2SWK is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This surface mount die offers a collector-emitter breakdown voltage of 650V and a continuous collector current of 45A under typical test conditions (VGE, 15V; IC, 45A), with a pulsed collector current capability of 200A. The IGBT exhibits a VCE(on) of 1.9V at the specified test parameters. Operating across a wide temperature range of -55°C to 175°C (TJ), this component is suitable for demanding environments. The NGTD21T65F2SWK, supplied in Tape & Reel packaging, is utilized in power factor correction, electric vehicle powertrains, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 45A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
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