NGTD20T120F2WP
IGBT TRENCH FIELD STOP 1200V DIEManufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTD20T120F2WP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a breakdown voltage of 1200V. This die-format IGBT features a standard input type and is designed for surface mount applications. The collector emitter on-voltage (Vce(on)) is a maximum of 2.4V at 15V gate-emitter voltage and 20A collector current. It offers a pulsed collector current (Icm) capability of 100A. The operating temperature range is from -55°C to 175°C (TJ). This component is suitable for applications in industrial power supplies, motor control, and renewable energy systems. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
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