NGTD13T65F2WP
IGBT TRENCH FIELD STOP 650V DIEManufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTD13T65F2WP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component, supplied in a die package for surface mounting, features a 650V collector-emitter breakdown voltage. The IGBT type is Trench Field Stop, offering efficient switching characteristics. Key parameters include a Vce(on) of 2.2V at 15V gate-emitter voltage and 30A collector current. The device operates across a wide temperature range of -55°C to 175°C. The NGTD13T65F2WP is suitable for applications in power supplies, motor drives, and industrial automation where robust high-voltage switching is required. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
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