NGTD13T120F2SWK
IGBT TRENCH FIELD ST 1200V WAFERManufacturer: onsemi
Categories: Single IGBTs
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onsemi's NGTD13T120F2SWK is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This wafer-packaged component offers a 1200V collector-emitter breakdown voltage. Key electrical characteristics include a maximum on-state voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 15A collector current. The device is specified for continuous collector current (Ic) of 15A, with a pulsed collector current (Icm) capability of 60A. Operating across a wide temperature range of -55°C to 175°C (TJ), it is suitable for high-temperature environments. This IGBT is utilized in industries such as industrial automation, power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A |
| Supplier Device Package | Wafer |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
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