NGTB75N65FL2WAG
IGBT FIELD STOP 650V 200A TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB75N65FL2WAG is a Field Stop Insulated Gate Bipolar Transistor (IGBT) rated for 650 V collector-emitter breakdown voltage. This device features a continuous collector current capability of 200 A and a pulsed collector current of 200 A. The IGBT Type is Field Stop, with a standard input. Key performance parameters include a collector-emitter saturation voltage (Vce(on)) of 2V at 15V Vge and 75A Ic, gate charge (Qg) of 310 nC, and switching energy of 610µJ (on) and 1.2mJ (off) under test conditions of 400V, 75A, 10 Ohm, and 15V Vge. The reverse recovery time (trr) is 90 ns. The component has a maximum power dissipation of 536 W and an operating temperature range of -55°C to 175°C (TJ). This device is supplied in a TO-247-4L package, suitable for through-hole mounting. It is commonly utilized in industrial power applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 90 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Supplier Device Package | TO-247-4L |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 23ns/157ns |
| Switching Energy | 610µJ (on), 1.2mJ (off) |
| Test Condition | 400V, 75A, 10Ohm, 15V |
| Gate Charge | 310 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 536 W |
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