NGTB75N60SWG
IGBT 75A 600V TO-247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB75N60SWG is a 600V, 100A insulated gate bipolar transistor (IGBT) housed in a TO-247-3 package. This through-hole component offers a maximum continuous collector current of 100A and a pulsed collector current of 200A. Its static Vce(on) is rated at 2V at 15V gate-emitter voltage and 75A collector current, with a power dissipation of 595W. The device features a gate charge of 310 nC and exhibits typical switching times of 110ns turn-on and 270ns turn-off at 25°C, with a reverse recovery time of 80 ns. Switching energy is specified at 1.5mJ turn-on and 1mJ turn-off under test conditions of 400V, 75A, 10 Ohm, and 15V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 110ns/270ns |
| Switching Energy | 1.5mJ (on), 1mJ (off) |
| Test Condition | 400V, 75A, 10Ohm, 15V |
| Gate Charge | 310 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 595 W |
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