NGTB75N60FL2WG
IGBT 600V 75A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB75N60FL2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 100 A, with a pulsed capability of 200 A. The device exhibits a maximum on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 75A collector current. Key performance parameters include a typical gate charge of 310 nC, switching energies of 1.5 mJ (turn-on) and 1 mJ (turn-off) under test conditions of 400V, 75A, 10 Ohm, and 15V. The NGTB75N60FL2WG is packaged in a TO-247-3 through-hole configuration and operates within an extended temperature range of -55°C to 175°C. This IGBT is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 110ns/270ns |
| Switching Energy | 1.5mJ (on), 1mJ (off) |
| Test Condition | 400V, 75A, 10Ohm, 15V |
| Gate Charge | 310 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 595 W |
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