NGTB60N65FL2WG
IGBT FIELD STOP 650V 100A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB60N65FL2WG is a 650 V, 100 A Trench IGBT designed for demanding power applications. This Field Stop IGBT offers a maximum collector power dissipation of 595 W and a pulsed collector current capability of 240 A. Featuring a low on-state voltage of 2V at 15V gate-emitter voltage and 60A collector current, it minimizes conduction losses. The device exhibits efficient switching characteristics with turn-on delay (Td(on)) of 117 ns and turn-off delay (Td(off)) of 265 ns at 25°C, with switching energies of 1.59 mJ (on) and 660 µJ (off). It operates across an extended temperature range of -55°C to 175°C (TJ) and is packaged in a TO-247-3 through-hole configuration. This IGBT is well-suited for use in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 96 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 117ns/265ns |
| Switching Energy | 1.59mJ (on), 660µJ (off) |
| Test Condition | 400V, 60A, 10Ohm, 15V |
| Gate Charge | 318 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 595 W |
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