NGTB60N60SWG
IGBT 600V 120A 298W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB60N60SWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 120 A, with a pulsed capability of 240 A. It offers a maximum power dissipation of 298 W and a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate-emitter voltage and 60 A collector current. The NGTB60N60SWG exhibits excellent switching characteristics with a gate charge of 173 nC and switching energies of 1.41 mJ (turn-on) and 600 µJ (turn-off) under specified test conditions. This component is housed in a TO-247-3 package for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. Industries including industrial power supplies, motor control, and renewable energy systems commonly utilize this type of IGBT.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 76 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 87ns/180ns |
| Switching Energy | 1.41mJ (on), 600µJ (off) |
| Test Condition | 400V, 60A, 10Ohm, 15V |
| Gate Charge | 173 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 298 W |
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