NGTB50N65S1WG
IGBT TRENCH 650V 140A TO247Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi NGTB50N65S1WG is a 650 V, 140 A Trench IGBT designed for high-power switching applications. This through-hole component features a maximum collector current of 140 A and a pulsed collector current of 140 A, with a maximum power dissipation of 300 W. The collector-emitter saturation voltage (Vce(on)) is specified at 2.45 V at 15 V gate voltage and 50 A collector current. Gate charge is 128 nC, and the reverse recovery time (trr) is 70 ns. Switching energy characteristics are 1.25 mJ (on) and 530 µJ (off) under test conditions of 400 V, 50 A, 10 Ohm, and 15 V. The operating temperature range is -55°C to 175°C (TJ). This IGBT is packaged in a TO-247-3 configuration and is supplied in tubes. It is suitable for use in industrial applications such as motor drives and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 70 ns |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 75ns/128ns |
| Switching Energy | 1.25mJ (on), 530µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 128 nC |
| Current - Collector (Ic) (Max) | 140 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 300 W |
Request a Quote
Clients Also Buy
FGY160T65SPD-F085
650V FS GEN3 TRENCH IGBT
NGD18N40CLBT4
IGBT 430V 15A DPAK
NGTB60N60SWG
IGBT 600V 120A 298W TO247
