NGTB50N65FL2WAG
IGBT FIELD STOP 650V 160A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB50N65FL2WAG is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 160 A, with a pulsed capability of the same. The device exhibits a low saturation voltage of 2V at 15V gate-emitter voltage and 50A collector current. With a maximum power dissipation of 417 W, it is suitable for demanding power conversion systems. The NGTB50N65FL2WAG offers efficient switching characteristics, with typical turn-on delay of 23 ns and turn-off delay of 123 ns at 25°C, and switching energies of 420 µJ (on) and 550 µJ (off) under specified test conditions. Its TO-247-4L package facilitates through-hole mounting. This IGBT is commonly employed in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 94 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Supplier Device Package | TO-247-4L |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 23ns/123ns |
| Switching Energy | 420µJ (on), 550µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 215 nC |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 417 W |
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