NGTB50N60SWG
IGBT 600V 50A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB50N60SWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 100A, with a pulsed capability of 200A. Key performance parameters include a Vce(on) of 2.6V at 15V gate-emitter voltage and 50A collector current, and a gate charge of 135 nC. The IGBT exhibits typical turn-on and turn-off delay times of 70ns and 144ns respectively at 25°C, with a switching energy of 600µJ (off). It operates within an extended temperature range of -55°C to 150°C. Packaged in a TO-247-3 through-hole configuration, the NGTB50N60SWG is suitable for use in industrial motor drives, power supplies, and automotive applications requiring high efficiency and robust performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 376 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 70ns/144ns |
| Switching Energy | 600µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 135 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
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