NGTB50N60S1WG
IGBT 50A 600V TO-247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB50N60S1WG is a trench IGBT designed for high-power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 100A, with a pulsed current rating (Icm) of 200A. The NGTB50N60S1WG offers a maximum power dissipation of 417W and a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 50A collector current. Gate charge is specified at 220 nC. Switching performance includes turn-on delay (Td(on)) of 100ns and turn-off delay (Td(off)) of 237ns at 25°C, with a reverse recovery time (trr) of 94 ns. The device operates across a wide temperature range from -55°C to 175°C (TJ). The NGTB50N60S1WG is packaged in a TO-247-3 through-hole configuration, commonly utilized in motor control, power supplies, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 94 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 100ns/237ns |
| Switching Energy | 1.5mJ (on), 460µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 220 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 417 W |
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