NGTB50N60L2WG
IGBT 600V 50A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB50N60L2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 100 A, with a pulsed capability of 200 A. Its low on-state voltage of 1.8 V at 15 V gate-emitter voltage and 50 A collector current, combined with a maximum power dissipation of 500 W, ensures efficient operation. The device exhibits switching energies of 800 µJ (on) and 600 µJ (off) under specified test conditions (400 V, 50 A, 10 O, 15 V), with typical turn-on and turn-off delays of 110 ns and 270 ns respectively. The NGTB50N60L2WG is housed in a TO-247-3 package for through-hole mounting, operating across a wide temperature range of -55°C to 175°C. This IGBT is suitable for use in industrial motor drives, power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 67 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 110ns/270ns |
| Switching Energy | 800µJ (on), 600µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 310 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 500 W |
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