The onsemi NGTB50N60FWG is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Featuring a 600V breakdown voltage and a continuous collector current rating of 100A, this component offers a maximum power dissipation of 223W. Its robust TO-247 package ensures efficient thermal management. The NGTB50N60FWG is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits, where high efficiency and reliable switching are critical. This IGBT provides a compelling solution for power conversion systems requiring superior performance and durability.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet: