NGTB50N60FLWG
IGBT 600V 50A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB50N60FLWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 100 A, with a pulsed capability of 200 A. The IGBT exhibits a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 50 A collector current. Switching characteristics include a turn-on delay (Td(on)) of 116 ns and turn-off delay (Td(off)) of 292 ns at 25°C, with a switching energy of 1.1 mJ (on) and 600 µJ (off), tested under 400 V, 50 A, 10 Ohm, 15 V conditions. With a maximum power dissipation of 223 W and an operating temperature range of -55°C to 150°C, the NGTB50N60FLWG is suitable for demanding applications in industries such as industrial motor drives and power supplies. It is supplied in a TO-247-3 package for through-hole mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 85 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 116ns/292ns |
| Switching Energy | 1.1mJ (on), 600µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 310 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 223 W |
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