NGTB50N60FL2WG
IGBT 600V 50A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB50N60FL2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 100 A, with a pulsed current rating of 200 A. Optimized for low conduction losses, the Vce(on) is rated at 2V at 15V gate-emitter voltage and 50A collector current. The IGBT exhibits a switching energy of 1.5 mJ (turn-on) and 460 µJ (turn-off) at the specified test conditions (400V, 50A, 10 Ohm, 15V gate drive). The NGTB50N60FL2WG supports a maximum power dissipation of 417 W and operates within an extended temperature range of -55°C to 175°C. Its robust TO-247-3 package with through-hole mounting is suitable for demanding industrial power supplies, motor control, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 94 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 100ns/237ns |
| Switching Energy | 1.5mJ (on), 460µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 220 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 417 W |
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