NGTB50N120FL2WG
IGBT 1200V 100A 535W TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB50N120FL2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current (Ic) rating of 100 A, with a pulsed current (Icm) capability of 200 A. The on-state voltage drop (Vce(on)) is specified at 2.2 V maximum at 15 V gate-emitter voltage and 50 A collector current. With a maximum power dissipation of 535 W and a junction temperature range of -55°C to 175°C, it is suitable for demanding power conversion tasks. The device exhibits switching characteristics with turn-on delay (Td(on)) of 118 ns and turn-off delay (Td(off)) of 282 ns at 25°C, along with a reverse recovery time (trr) of 256 ns. Switching energy is listed as 4.4 mJ (on) and 1.4 mJ (off) under test conditions of 600 V, 50 A, 10 Ohm, and 15 V. The NGTB50N120FL2WG is packaged in a TO-247-3 through-hole configuration, commonly utilized in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 256 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 118ns/282ns |
| Switching Energy | 4.4mJ (on), 1.4mJ (off) |
| Test Condition | 600V, 50A, 10Ohm, 15V |
| Gate Charge | 311 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 535 W |
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