NGTB40N65IHRWG
IGBT FIELD STOP 650V 80A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N65IHRWG is a 650V, 80A Field Stop Insulated Gate Bipolar Transistor (IGBT) in a TO-247-3 package. This device offers a maximum collector power dissipation of 405W and a pulsed collector current of 160A. Key parameters include a collector-emitter saturation voltage (Vce(on)) of 1.7V at 15V gate-emitter voltage and 40A collector current, alongside a gate charge of 190 nC. The operating temperature range is -40°C to 175°C (TJ). This component is suitable for high-power switching applications in industries such as renewable energy, industrial motor drives, and power supplies. It is supplied in a tube package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | 420µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 190 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 405 W |
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