NGTB40N65IHL2WG
IGBT TRENCH/FS 650V 80A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N65IHL2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component offers a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of up to 160 A. Featuring a maximum power dissipation of 300 W, it is housed in a standard TO-247-3 package for through-hole mounting. Key electrical characteristics include a Vce(on) of 2.2 V at 15 V gate-source voltage and 40 A collector current, and a gate charge of 135 nC. The device exhibits a reverse recovery time (trr) of 465 ns and a switching energy (Eoff) of 360 µJ under test conditions of 400 V and 40 A. Its operating temperature range is -55°C to 175°C (TJ). This IGBT is suitable for demanding applications in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 465 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/140ns |
| Switching Energy | 360µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 135 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 300 W |
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