NGTB40N60L2WG
IGBT TRENCH/FS 600V 80A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N60L2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 80A, with a pulsed current capability of 160A. With a maximum power dissipation of 417W and a low on-state voltage (Vce(on)) of 2.61V at 15V Vge and 40A Ic, it offers efficient power handling. The device exhibits switching characteristics with typical turn-on delay (Td(on)) of 98ns and turn-off delay (Td(off)) of 213ns at 25°C, and a reverse recovery time (trr) of 73ns. Gate charge is specified at 228nC. Packaged in a TO-247-3 through-hole configuration, the NGTB40N60L2WG is suitable for power conversion and control systems across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 73 ns |
| Vce(on) (Max) @ Vge, Ic | 2.61V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 98ns/213ns |
| Switching Energy | 1.17mJ (on), 280µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 228 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 417 W |
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