NGTB40N60IHLWG
IGBT 600V 40A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N60IHLWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 80A, with a pulsed capability of 200A. It is optimized for efficient switching performance, exhibiting a typical on-state voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 40A collector current. The gate charge is specified at 130 nC, and switching characteristics include turn-on and turn-off delays of 70ns and 140ns respectively at 25°C. The NGTB40N60IHLWG is packaged in a TO-247-3 through-hole configuration, supporting a maximum power dissipation of 250W and operating across a temperature range of -55°C to 150°C. This component is utilized in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 400 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 70ns/140ns |
| Switching Energy | 400µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 250 W |
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