NGTB40N60FLWG
IGBT 600V 80A 257W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi NGTB40N60FLWG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of 160 A. The device exhibits a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-source voltage and 40 A collector current. Its switching characteristics include a gate charge of 171 nC and a reverse recovery time (trr) of 77 ns, with switching energies of 890 µJ (on) and 440 µJ (off) under specified test conditions. With a maximum power dissipation of 257 W, the NGTB40N60FLWG is suitable for demanding applications in industrial power supplies, motor control, and power factor correction circuits. It is supplied in a TO-247 package for robust thermal management and ease of mounting in through-hole designs, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 77 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 85ns/174ns |
| Switching Energy | 890µJ (on), 440µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 171 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 257 W |
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