NGTB40N60FL2WG
IGBT 600V 80A 366W TO247Manufacturer: onsemi
Categories: Single IGBTs
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onsemi NGTB40N60FL2WG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed current capability of 160 A. The device offers a maximum power dissipation of 366 W and a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 40A collector current. Switching characteristics include a gate charge of 170 nC and typical turn-on delay (Td(on)) of 84ns and turn-off delay (Td(off)) of 177ns at 25°C. Reverse recovery time (trr) is specified at 72 ns. The NGTB40N60FL2WG is housed in a TO-247-3 package suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C. This IGBT is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 72 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 84ns/177ns |
| Switching Energy | 970µJ (on), 440µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 366 W |
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